| abstract |
The present invention relates to a CMP polishing liquid for polishing a substrate comprising at least a barrier metal, a metal film, and a silicon dioxide film or a substrate comprising at least a barrier metal, a metal film, a silicon dioxide film, and a low-k film, wherein: the polishing liquid contains abrasive particles, a metal oxide dissolving agent, an oxidizing agent, a water-soluble polymer, and an alkali metal ion; the surface potentials of the abrasive particles and the metal film upon polishing have the same sign and the product of the surface potential (mV) of the abrasive particles and the surface potential (mV) of the metal film is 250 to 10000; and pH is 7.0 to 11.0. |