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filingDate 2019-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2019-08-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2019252495-A1
titleOfInvention Multiple-threshold nanosheet transistors
abstract Semiconductor devices and methods of making the same include forming a stack of alternating layers of channel material and sacrificial material. The sacrificial material is etched away to free the layers of channel material. A gate stack is formed around the layers of channel material. At least one layer of channel material is deactivated. Source and drain regions are formed in contact with the at least one layer of active channel material.
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