Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bb2daa5d9ca2f31f03d8bf6ca9bec4ac http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fca2eea4102510ed7c148ad6c53bbed7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_46f8af5f7e6731433b59a9334eb8382c |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-4813 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0696 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-49 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8252 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0605 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-00 |
filingDate |
2018-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e34275801411f9b61d37a6269ffb41ab http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_91449152358725bb0517b2b2e9a090db |
publicationDate |
2019-06-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2019198624-A1 |
titleOfInvention |
Hetero-Epitaxial Output Device Array |
abstract |
A GaN-on-Si output transistor array comprises a plurality of small monolithic output transistors. The substrate surface has multiple grids, upon which multiple pieces of the small monolithic GaN films are grown epitaxially on the silicon substrate. Each small monolithic output transistor is formed in a respective small monolithic GaN film. By disabling defective transistors, the overall yield/reliability is improved. |
priorityDate |
2017-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |