| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_99a5fe0651a3ad2cbba5bb54849a1427 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01L2300-0829
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01L2200-0605
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B41J2202-15
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N2035-1041
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N2035-1034
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01L2400-0487
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01L2300-16 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N35-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N35-1065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01L3-0268
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01L3-02 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N35-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B01L3-02 |
| filingDate |
2018-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4527375b6e68cc7fa719365fb510fba9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ad0f88f20f15b5d24787daaefed92885 |
| publicationDate |
2019-06-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2019184390-A1 |
| titleOfInvention |
Solution ejecting device and solution dropping device |
| abstract |
An embodiment comprises a drug solution ejecting device having a pressure chamber including a discharge port on a first side, a supply port on a second side, and an inner wall of the pressure chamber between the first and second sides. An actuator is configured to change pressure to eject a solution from a nozzle via the discharge port. The inner wall of the pressure chamber includes at least a part that is silicon or silicon oxide. As detected by X-rat photoelectron spectroscopy, a surface of the part has a ratio of a total area of peaks of silicon in monovalent, divalent, and trivalent binding states to an area of a peak of silicon in a tetravalent binding state that is greater than a same such ratio of a surface of a silicon wafer having only an untreated natural oxide film formed thereon. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10682874-B2 |
| priorityDate |
2017-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |