| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02208
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-022
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76832
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02167
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28158
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 |
| filingDate |
2018-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4b88f540a3d20f5199be8b37dec9fb17
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_590a6a3b21f691516d42ceb3ccefa747
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1fa32f293c1722048618ae748be44aa2 |
| publicationDate |
2019-04-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2019103276-A1 |
| titleOfInvention |
Device and method of dielectric layer |
| abstract |
A method includes forming an interlayer dielectric (ILD) and a gate structure over a substrate. The gate structure is surrounded by the ILD. The gate structure is etched to form a recess. A first dielectric layer is deposited over sidewalls and a bottom of the recess and over a top surface of the ILD using a first Si-containing precursor. A second dielectric layer is deposited over and in contact with the first dielectric layer using a second Si-containing precursor different from the first Si-containing precursor. A third dielectric layer is deposited over and in contact with the second dielectric layer using the first Si-containing precursor. Portions of the first, second, and third dielectric layer over the top surface of the ILD are removed. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10510874-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11164789-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019165127-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2021202254-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11522074-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10950714-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10872762-B2 |
| priorityDate |
2017-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |