| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9047b16961c0aee78d7de367969339b2 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B69-00 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76841
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-27
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02216
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-48 |
| filingDate |
2018-03-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6078580d083a0e14daf7d1bb81a1c7d9 |
| publicationDate |
2019-03-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2019088545-A1 |
| titleOfInvention |
Manufacturing method of semiconductor device |
| abstract |
In a manufacturing method of a semiconductor device according to the present embodiment, a semiconductor substrate, which has a first face and a second face, is bonded to a support substrate with the first face facing toward the support substrate. The first face has a semiconductor element. The second face is located opposite to the first face. The semiconductor substrate is processed from the second face to form a contact hole to reach the first face from the second face. A first insulation film is formed on an inner surface of the contact hole. A metal is embedded on the first insulation film in the contact hole to form a metal electrode. The formation of the first insulation film is performed by plasma CVD in an atmosphere of 200° C. or lower, containing a gas containing silicon and oxygen, an oxygen-containing gas, and an NH-group containing gas. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11330730-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11164775-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11587849-B2 |
| priorityDate |
2017-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |