| abstract |
An ohmic electrode that is used in, for example, a power semiconductor device including: a SiC substrate including an ohmic contact layer formed on a SiC semiconductor layer and formed of a material selected from the group consisting of nickel and nickel silicide, a barrier layer formed on the ohmic contact layer, and an electrode layer formed on the barrier layer and formed of a copper alloy containing at least one from among zinc, nickel, titanium, manganese, and calcium. |