Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-458 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0924 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28562 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823871 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02068 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02123 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42392 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-092 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823807 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823821 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823814 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78618 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28518 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 |
filingDate |
2018-10-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_600c83f2e38bae604b3073edf8cc5551 |
publicationDate |
2019-02-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2019051531-A1 |
titleOfInvention |
Contact integration and selective silicide formation methods |
abstract |
Methods for selective silicide formation are described herein. The methods are generally utilized in conjunction with contact structure integration schemes and provide for improved silicide formation characteristics. In one implementation, a silicide material is selectively formed on source/drain (S/D) regions at a temperature less than about 550° C. The resulting silicide is believed to exhibit desirable contact resistance and applicability in advanced contact integration schemes. |
priorityDate |
2016-09-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |