| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7729637c1c11237c25aae87a94d69dd5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_73d55b44219a84c850812a4488def924
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_41ac7ff6ab574ca3737b892da2ebfe6f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1083
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02241
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4236 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02175
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7838
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66462
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7827
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28264
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4236 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-51
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778 |
| filingDate |
2018-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_86b6dba25568970f73caa7bbd944e7dd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3b629ddd1109e866bad7d4759f903ef0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_516daa47527a89815c5a9a89e7819084
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_add14f00e55f48cbd70df1015211c2ef
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c724cd1f240b799f64ff03d340a8bb70
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_15ecb72c26b029483d322b58e9713f19 |
| publicationDate |
2019-01-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2019019873-A1 |
| titleOfInvention |
Gate switching device and method manufacturing the same |
| abstract |
A method of manufacturing a gate switching device is provided. The method includes: forming an oxide insulating layer on a gallium nitride semiconductor layer of n-type or i-type; forming a gallium oxide layer at an interface between the oxide insulating layer and the gallium nitride semiconductor layer by heating the oxide insulating layer and the gallium nitride semiconductor layer at a temperature higher than a temperature of the oxide insulating layer and the gallium nitride semiconductor layer in the formation of the oxide insulating layer; and forming a gate electrode opposed to the gallium nitride semiconductor layer via the gallium oxide layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102020205706-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11777022-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11508838-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2020279939-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11563114-B2 |
| priorityDate |
2017-07-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |