Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_51d028c578ae85cb937b5b34a5129fbc |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4966 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42372 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823437 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4966 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 |
filingDate |
2016-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5a613dec8916f7a3150cdaee60c54f19 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e01978a16ddd2b150bbf262b5c1dec26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_47ffd34e22b998695ce7c26ca5d8df06 |
publicationDate |
2019-01-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2019019793-A1 |
titleOfInvention |
Transistor threshold voltage variation optimization |
abstract |
One embodiment provides an apparatus. The apparatus includes a first transistor and a second transistor. The first transistor includes a first drain, a first source coupled to the first drain by a first channel, and a first gate stack comprising a plurality of layers. The second transistor includes a second drain, a second source coupled to the second drain by a second channel, and a second gate stack comprising a plurality of layers. Each gate stack includes a work function material layer to optimize a threshold voltage variation between the transistors. |
priorityDate |
2016-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |