| abstract |
Described herein are components of a semiconductor processing apparatus, where at least one surface of the component is resistant to a halogen-containing reactive plasma. The component includes a solid structure having a composition containing crystal grains of yttrium oxide, yttrium fluoride or yttrium oxyfluoride and at least one additional compound selected from an oxide, fluoride, or oxyfluoride of neodymium, cerium, samarium, erbium, aluminum, scandium, lanthanum, hafnium, niobium, zirconium, ytterbium, hafnium, and combinations thereof. |