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publicationDate 2019-01-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2019013195-A1
titleOfInvention Method of manufacturing semiconductor device and method of forming metal oxide film
abstract A method of manufacturing a semiconductor device having a metal oxide film with workpiece accommodated in a chamber, includes: supplying a precursor gas containing a metal complex into the chamber to form a precursor layer on the workpiece from the precursor gas; supplying an oxidizing gas into the chamber to oxidize the precursor layer so that a metal oxide layer is formed, the oxidizing gas being a gas containing H 2 O or a gas having a functional group containing hydrogen atoms in the metal complex and containing an oxidant to generate H 2 O by reaction with the functional group; supplying an H 2 O removal gas containing alcohols or amines into the chamber to remove H 2 O adsorbed onto the metal oxide layer; and executing a plurality of cycles each including the supplying a precursor gas and the supplying an oxidizing gas. At least some of the cycles includes the supplying an H 2 O removal gas.
priorityDate 2017-07-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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