Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-80203 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2225-06541 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-08146 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-89 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2885 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-481 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53285 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02068 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L25-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L25-0657 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2885 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32133 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32058 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-48 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L25-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L25-065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-288 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
filingDate |
2017-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6f14e200080dfdad64ffe3958ee584ce http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4fff1ca34e4488281f4f6e8714137bdd |
publicationDate |
2018-12-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2018350749-A1 |
titleOfInvention |
Semiconductor device including superconducting metal through-silicon-vias and method of manufacturing the same |
abstract |
A semiconductor structure and methods of forming the semiconductor structure generally includes providing a thermocompression bonded superconducting metal layer sandwiched between a first silicon substrate and a second silicon substrate. The second substrate includes a plurality of through silicon vias to the thermocompression bonded superconducting metal layer. A second superconducting metal is electroplated into the through silicon vias using the thermocompression bonded superconducting metal layer as a bottom electrode during the electroplating process, wherein the filling is from the bottom upwards. |
priorityDate |
2017-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |