| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0653
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-518
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4966
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4958 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42392
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0653
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4966
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-518
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1037
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6656
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4958
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7827
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66666
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K17-687
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78642
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41733 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-51
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03K17-687 |
| filingDate |
2017-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9109b68b55594387713c374f294c46cb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6a0dfcbf434bd6a45b792fd64e5d07e8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_60661cbf598e365e988d959591c43d55
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_97fdcd07cb106438bda72fc4c4cbdf2c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_caab8ccb770249c3ffe5bfd7eb03dd5a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f09c0672241c7435c83cddf182921e0f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_365457ad16865000ccaf148d00b629d0 |
| publicationDate |
2018-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2018342615-A1 |
| titleOfInvention |
Super long channel device within vfet architecture |
| abstract |
Embodiments are directed to methods and resulting structures for a vertical field effect transistor (VFET) having a super long channel. A pair of semiconductor fins is formed on a substrate. A semiconductor pillar is formed between the semiconductor fins on the substrate. A region that extends under all of the semiconductor fins and under part of the semiconductor pillar is doped. A conductive gate is formed over a channel region of the semiconductor fins and the semiconductor pillar. A surface of the semiconductor pillar serves as an extended channel region when the gate is active. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11502169-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10818753-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11069784-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2020365698-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10833190-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10573745-B2 |
| priorityDate |
2017-05-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |