| abstract |
A semiconductor light emitting device includes a Group-III nitride semiconductor layer on a buffer layer. The buffer layer includes a first layer, a second layer, and a third layer in that order. Each of the first layer, the second layer, and the third layer includes a composition which includes aluminum (Al), nitrogen (N), and oxygen (O). A minimum or average value of an oxygen concentration (atoms/cm 3 ) of each of the first layer and the third layer is greater than an oxygen concentration (atoms/cm 3 ) of the second layer. |