patent/US-2018337066-A1

http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018337066-A1

Outgoing Links

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filingDate	2018-07-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor	http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1310edba2e5cc62ebf777acf4fcd0efd http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_94f973031811a1feaba9ba409c3ec060 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_318c0201ec6519129a3fbb18e8e0c0d8
publicationDate	2018-11-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber	US-2018337066-A1
titleOfInvention	Post-Passivation Interconnect Structure and Method of Forming the Same
abstract	A semiconductor device includes a passivation layer formed on a semiconductor substrate, a protective layer overlying the passivation layer and having an opening, an interconnect structure formed in the opening of the protective layer, a bump formed on the interconnect structure, and a molding compound layer overlying the interconnect structure and being in physical contact with a lower portion of the bump.
isCitedBy	http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11721679-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11145637-B2
priorityDate	2012-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type	http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate	Subject
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Total number of triples: 59.