| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_543f81076a0539dda3718ef97249ec66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_88fc7f9eb617072238851d46591a0c76 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823456
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823481 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4236
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66666
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-053
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0649
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823456
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-30 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 |
| filingDate |
2017-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ddaf551d2f967b9a1bc777564b7ae359
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8d87657677c055602038ce600d8483a5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2701f65fb1ff6a7d64225b0adb7993fd |
| publicationDate |
2018-11-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2018323190-A1 |
| titleOfInvention |
Semiconductor device and method for fabricating the same |
| abstract |
A method for fabricating semiconductor device includes the steps of first forming a first trench and a second trench in a substrate and then forming a shallow trench isolation (STI) in the first trench, in which the STI comprises a top portion and a bottom portion and a top surface of the top portion is even with or higher than a bottom surface of the second trench. Next, a conductive layer is formed in the first trench and the second trench to form a first gate structure and a second gate structure. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2023035406-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11469306-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2023050682-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10374047-B2 |
| priorityDate |
2017-05-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |