| abstract |
The present disclosure relates to a manufacturing method of inorganic thin film transistors (TFTs), including: forming a p-type semiconductor layer and a n-type semiconductor layer on a hard substrate in sequence, forming a slot on the p-type semiconductor layer, wherein the slot passes through the n-type semiconductor layer, forming a source and a drain on the n-type semiconductor layer, wherein the source and the drain are respectively configured on two sides of the slot, performing a flip-transferring process to transfer the p-type semiconductor layer, the n-type semiconductor layer, the source, and the drain on a flexible substrate, forming a gate insulation layer and a gate on the p-type semiconductor layer in sequence, forming a flat layer on the gate insulation layer, wherein the flat layer covers the gate. The inorganic TFT is designed to obtain a narrow channel inorganic TFT device, to reduce process requirements, and to reduce costs. |