| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_08ff3f2b8b103623bba3b8c3331a82cd |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02027 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1804
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-028
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02161
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-107
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-022408
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1446
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02027 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-107
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-028
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0224
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0216
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-02 |
| filingDate |
2018-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e578568934aaf41e84f8b4571a4e1fd9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7930b21da2628f19db8b002386af5a35
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d20cd0738b277279fc851b22547f54eb |
| publicationDate |
2018-10-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2018309012-A1 |
| titleOfInvention |
Process of manufacturing an avalanche diode |
| abstract |
In one form, a process of manufacturing an avalanche photodiode includes forming an insulating layer over an active region of a semiconductor substrate. A shallow terminal of the avalanche photodiode is defined using a first patterned mask. A first dopant is implanted through the first patterned mask and the insulating layer to form the shallow terminal. The first patterned mask is removed. A deep terminal of the avalanche photodiode is defined using second patterned mask. A second dopant is implanted through the second patterned mask and insulating layer to form the deep terminal of the avalanche photodiode. A respective terminal of at least one of the shallow terminal and the deep terminal is defined using a respective patterned mask that forms at least two regions that are spatially separated from each other with no implanted structure located in a space therebetween. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022352400-A1 |
| priorityDate |
2016-10-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |