Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0635 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-761 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-94 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0629 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0657 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823431 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66181 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-94 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-761 |
filingDate |
2018-06-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5a57b7d5af9ec42673b89b1f25488a1a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_15c31ac78394568dea434cbc69f28a69 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e89aa741903ae9e663d6b0e913e32d9a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fa57155a94ec485068066724e7721ca7 |
publicationDate |
2018-10-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2018308993-A1 |
titleOfInvention |
Mis capacitor for finned semiconductor structure |
abstract |
MIS capacitors are formed using a finned semiconductor structure. A highly doped region including the fins is formed within the structure and forms one plate of a MIS capacitor. A metal layer forms a second capacitor plate that is separated from the first plate by a high-k capacitor dielectric layer formed directly on the highly doped fins. Contacts are electrically connected to the capacitor plates. A highly doped implantation layer having a conductivity type opposite to that of the highly doped region provides electrical isolation within the structure. |
priorityDate |
2016-10-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |