http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018291269-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4283a2f8ade5dc582d75300427a38e50 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32134 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32134 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1888 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-06 |
| filingDate | 2018-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cdf514c982f3c2e69a6cd1fb407a266c |
| publicationDate | 2018-10-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-2018291269-A1 |
| titleOfInvention | Etchant |
| abstract | The present invention aims to provide etchants suitable for etching indium oxide-based films in which precipitation of oxalic acid is reduced even when moisture is evaporated and which provide excellent residue removal not only on organic films and SiN but also on glass. Also, the present invention aims to provide etchants that have a high solubility of indium to reduce precipitation of a salt of oxalic acid and indium, and therefore can be used for a long period of time. The present invention also aims to provide etchants that maintain a high etching rate. Included is an etchant for etching an indium oxide-based film, the etchant containing: (A) oxalic acid; (B) a primary amine having two or more hydroxy groups and/or a polyhydric alcohol; and (C) water. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-115505389-A |
| priorityDate | 2017-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 34.