| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-68368
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-6834
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-68327 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76251
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6835
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-743
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76895
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0649
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-4825
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1087
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-4827 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-74
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-683
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-482 |
| filingDate |
2018-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7f0ff56920ee3aa4b8a6af4c44565ac0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4a2aa982c168ba61627bcb3ff736caef
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0e7a6d6806784e2f36ef855d2dd76039
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_74796764ec83260e9edcfae6ea2f1bc6 |
| publicationDate |
2018-10-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2018286748-A1 |
| titleOfInvention |
Backside contact to a final substrate |
| abstract |
A device structure is formed using a silicon-on-insulator substrate. The device structure includes a first switch and a second switch that are formed within a device layer of the silicon-on-insulator substrate and between a buried insulator layer of the silicon on-insulator substrate and a dielectric layer disposed above and coupled to the device layer. An electrically-conducting connection is located in a first trench extending from the device layer through the buried insulator layer to a trap-rich layer such that the electrically-conducting connection is coupled with a substrate. |
| priorityDate |
2015-06-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |