http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018261395-A1
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6dd74b20fbf2e0ebf10c7bfad4f6c8c5 |
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G9-2059 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-542 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G9-2031 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G9-204 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G9-2004 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-865 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G9-2059 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G9-2031 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G9-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G9-2013 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01G9-20 |
filingDate | 2016-09-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dda85c45cad28174b494a786350dc2b0 |
publicationDate | 2018-09-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | US-2018261395-A1 |
titleOfInvention | Dye-sensitized photoelectric conversion element |
abstract | A dye-sensitized photoelectric conversion element includes a dye-sensitized photoelectric conversion cell. The dye-sensitized photoelectric conversion cell includes: a first electrode substrate including a transparent substrate and a transparent conductive film provided on the transparent substrate; a second electrode facing the first electrode substrate; an oxide semiconductor layer provided on the first electrode substrate or the second electrode; a photosensitizing dye adsorbed to the oxide semiconductor layer; and an electrolyte provided between the first electrode substrate and the second electrode. The first electrode substrate further has an ultraviolet absorbing layer. A transmittance T A (%) of the electrolyte at a wavelength corresponding to a band gap of an oxide semiconductor that constitutes the oxide semiconductor layer and a transmittance T B (%) of the first electrode substrate at the wavelength satisfy the following Equations (1): 0.01×T A ×T B <42 and (2): 3.5≤T B ≤70. |
priorityDate | 2015-09-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 78.