| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f58ee8dc490b49f50791ab2c0105ed71 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-778 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-417
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-872
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-402
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-404
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-407
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66219
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66212
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-872 |
| filingDate |
2018-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4a2d0dda6e39b4726e5920ae02a2e04e |
| publicationDate |
2018-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2018248049-A1 |
| titleOfInvention |
Schottky diode and method of manufacturing the same |
| abstract |
A Schottky diode comprises: a substrate; a first semiconductor layer located on the substrate; a second semiconductor layer located on the first semiconductor layer, two-dimensional electron gas being formed at an interface between the first semiconductor layer and the second semiconductor layer; a cathode located on the second semiconductor layer and forming an ohmic contact with the second semiconductor layer; a first passivation dielectric layer located on the second semiconductor layer; a field plate groove formed in the first passivation dielectric layer; and an anode covering the field plate groove and a portion of the first passivation dielectric layer, wherein a distance between a bottom surface of the field plate groove and the two-dimensional electron gas in a height direction is greater than 5 nm. |
| priorityDate |
2014-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |