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publicationDate 2018-08-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2018240885-A1
titleOfInvention Simplified gate to source/drain region connections
abstract Structures for a field-effect transistor and fabrication methods for forming a structure for a field-effect transistor. The structure may include a gate electrode, a source/drain region formed adjacent to a vertical sidewall of the gate electrode, and a conductive link that couples the vertical sidewall of the gate electrode with the source/drain region.
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