| abstract |
The present disclosure is directed to a semiconductor apparatus having a plurality of bonded semiconductor devices formed by a fusion bonding technique and a method for preparing the same. The semiconductor devices have conductive portions with higher coefficient of thermal expansion than their dielectric portions. By forming the depression to provide a space for the volume expansion of the conductive portion with higher coefficient of thermal expansion during the subsequent thermal treating process of the fusion bonding, the semiconductor apparatus formed of semiconductor devices by the fusion bonding technique does not exhibit a lateral protrusion into the interface between the two dielectric portions. As a result, the failure of the electrical function due to the lateral protrusion is effectively eliminated. |