| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f3518dca003902d9f332ad08ac9a6ffe |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14621
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14643
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H04N25-75
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1013
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H04N25-70
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14665
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14694
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H04N5-378 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H04N5-378
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-101
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-146 |
| filingDate |
2016-05-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f573157b52c395dafe96aae3c26bc9ab
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2591a1b7f7e1446c12e6f668e4dabe0e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_505bf90d525df9a78ff3294cba3095c5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eeb7f6a4e364b80415ac437b7be881fd |
| publicationDate |
2018-08-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2018219039-A1 |
| titleOfInvention |
Imaging device and method for manufacturing the same |
| abstract |
An imaging device includes a plurality of light-receiving elements 10 arranged in a two-dimensional matrix shape. Each of the light-receiving elements 10 includes a first electrode 31 , a photoelectric conversion layer 20 , and a second electrode 32 . The photoelectric conversion layer 20 has a laminated structure in which a first compound semiconductor layer 21 having a first conductivity type and a second compound semiconductor layer 22 having a second conductivity type that is a reverse conductivity type to the first conductivity type are laminated from a side of the first electrode. The second compound semiconductor layer has been removed in a region 11 between the light-receiving elements 10 . The first electrode 31 and the first compound semiconductor layer 21 are shared by the light-receiving elements. An impurity concentration of a first compound semiconductor layer 21 A near the first electrode is lower than that of a first compound semiconductor layer 21 B near the second compound semiconductor layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11329084-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114497244-A |
| priorityDate |
2015-07-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |