| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_050fc7b82c5d17d9aeb63a7cdcc546b3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_feb03de036e93e10c4497dcbf96d3911 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L45-1273
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L45-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8418
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-2472
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L45-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-826
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-011
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B63-82
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L45-1233 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L45-00 |
| filingDate |
2018-02-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_be9fcdd82eaf7c7af24b9dc7e97d21a1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1c9310b479744f3d47b90d0d2a865b0e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_84e2b42ceaadd551510a525431d8b5bf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d7e14baf3f151d522a956685e7410465 |
| publicationDate |
2018-07-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2018190903-A1 |
| titleOfInvention |
Resistive random access memory device having nano-scale tip and nanowire, memory array using the same and fabrication method thereof |
| abstract |
A resistive random access memory device having a nano-scale tip and a nanowire is provided. A memory array using the same also is provided and fabrication method thereof. A technique is provided for forming a bottom electrode having an upwardly protruding tapered tip structure through etching a semiconductor substrate and a top electrode being formed of a nanowire and a technique forming a resistive random access memory device at a location intersected with each other in order that an area of each memory cell is minimized and that an electric field is focused on the tip of the bottom electrode across the top electrode. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11043634-B2 |
| priorityDate |
2014-10-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |