| abstract |
A semiconductor device, a semiconductor substrate and a method of forming the same are disclosed. The semiconductor substrate includes a first silicon-containing layer, a single crystalline III-V compound semiconductor layer and an amorphous III-V compound semiconductor layer. The first silicon-containing layer has a first region and a second region. The single crystalline III-V compound semiconductor layer is disposed on the first silicon-containing layer in the first region. The amorphous III-V compound semiconductor layer is disposed on the first silicon-containing layer in the second region. |