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filingDate 2017-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2018-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2018166303-A1
titleOfInvention Method of selectively etching first region made of silicon nitride against second region made of silicon oxide
abstract Generation of a deposit can be suppressed and high selectivity can be acquired when etching a first region made of silicon nitride selectively against a second region made of silicon oxide. A method includes preparing a processing target object having the first region and the second region within a chamber provided in a chamber main body of a plasma processing apparatus; generating plasma of a first gas including a gas containing hydrogen within the chamber to form a modified region by modifying a part of the first region with active species of the hydrogen; and generating plasma of a second gas including a gas containing fluorine within the chamber to remove the modified region with active species of the fluorine.
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