abstract |
A tin compound, tin precursor compound for atomic layer deposition (ALD), a method of forming a tin-containing material film, and a method of synthesizing a tin compound, the tin compound being represented by Chemical Formula (I): n n n n n n n n n n n n wherein R 1 , R 2 , Q 1 , Q 2 , Q 3 , and Q 4 are each independently a Cl to C4 linear or branched alkyl group. |