http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018152005-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ebb922364a073f2289bfdefe862d1eff |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2272 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S2304-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-02251 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-1231 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-026 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-4087 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-026 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-12 |
| filingDate | 2017-09-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_450173cebc538c783eb3cf0ea788604a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_02a3ac357feadc3692bde8356b6eae6b |
| publicationDate | 2018-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-2018152005-A1 |
| titleOfInvention | Arrayed semiconductor device, optical transmission module, optical module, and method for manufacturing thereof |
| abstract | In the arrayed semiconductor optical device, a plurality of semiconductor optical devices including a first semiconductor optical device and a second semiconductor optical device are monolithically integrated on a semiconductor substrate, each of the semiconductor optical devices includes a first semiconductor layer having a multiple quantum well layer and a grating layer disposed on an upper side of the first semiconductor layer, a layer thickness of the first semiconductor layer of the first semiconductor optical device is thinner than a layer thickness of the first semiconductor layer of the second semiconductor optical device, and a height of the grating layer of the first semiconductor optical device is lower than a height of the grating layer of the second semiconductor optical device corresponding to difference in the layer thickness of the first semiconductor layer. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022018071-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11189991-B2 |
| priorityDate | 2016-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 37.