| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02167
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02178
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76883
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53257
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76885
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76834
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76832
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53295
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5226
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-528
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76816
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53209 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-528
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
2017-06-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7c537fb85f686d6f9005cc550fd0e67c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_89ac37a15b41608ebd73df1a47d3b489
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2d83f3d26420c724e3d8150be8e5dab5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9ec87ea7c00391dbbb151a66f98c33c6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_31ac51a6dd55bde39922d66ed84a91dc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_85dbf98ccd82e86281c191fa94d10076
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ea4240fc067182d6be3000605e02056a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c086bbfde3730927f8473109354e8fb7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8e9587a92475dd193265ee26ba6b1b95
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ad17a53f9778fc14c1d304d5a07dd67b |
| publicationDate |
2018-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2018151432-A1 |
| titleOfInvention |
Self Aligned Via and Method for Fabricating the Same |
| abstract |
A self aligned via and a method for fabricated a semiconductor device using a double-trench constrained self alignment process to form the via. The method includes forming a first trench and depositing a first metal into the first trench. Afterwards, the process includes depositing a dielectric layer over the first metal such that a top surface of the dielectric layer is at substantially the same level as the top surface of the first trench. Next, a second trench is formed and a via is formed by etching the portion of the dielectric layer exposed by the overlapping region between the first trench and the second trench. The via exposes a portion of the first metal and a second metal is deposited into the second trench such that the second metal is electrically coupled to the first metal. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10957579-B2 |
| priorityDate |
2016-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |