| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_700fe75857639b7afed2030c9f9e8961 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2933-0025
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2933-0016
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0093
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-007 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-405
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-60
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-13
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-007 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-40 |
| filingDate |
2017-11-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_86c8df74e980ae2de8fa90dfd1ee3b0c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a11c2b4127444ea32ed163421815b2f1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_062819d43bd34363aacafdc33eedaa4d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3cacddb82483724e892733742bea8b7b |
| publicationDate |
2018-05-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2018138368-A1 |
| titleOfInvention |
Light emitting diode having side reflection layer |
| abstract |
A light emitting diode including a side reflection layer. The light emitting diode includes: a semiconductor stack and a light exit surface having a roughened surface through which light generated from an active layer is emitted; side surfaces defining the light exit surface; and a side reflection layer covering at least part of the side surfaces. The light exit surface is disposed over a first conductivity type semiconductor layer opposite to the ohmic reflection layer, all layers from the active layer to the light exit surface are formed of gallium nitride-based semiconductors, and a distance from the active layer to the light exit surface is 50 μm or more. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2021242366-A1 |
| priorityDate |
2016-11-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |