http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018138285-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6af9a57049d2d91c036d4f5ab49154cb |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6831 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67115 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-665 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28518 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-683 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 |
| filingDate | 2016-11-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_00bce727f13f1c798e788d1f13fcef73 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2a6baf72eecf151862528a03d385607d |
| publicationDate | 2018-05-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-2018138285-A1 |
| titleOfInvention | Methods of forming integrated circuit structure with silicide reigon |
| abstract | Embodiments of the present disclosure relate to methods of forming an integrated circuit (IC) structure with a silicide region. Methods according to the present disclosure can include providing a structure including: a semiconductor region positioned on an electrostatic chuck, and a precursor metal positioned on and in contact with the semiconductor region; heating the semiconductor region of the structure to an annealing temperature by increasing a temperature of the electrostatic chuck; irradiating the structure with a radiant heat source, such that at least some of the precursor metal migrates into a portion of the semiconductor region to form a silicide region during the irradiating; and removing a remainder of the precursor metal from the structure to expose the silicide region, after the irradiating. |
| priorityDate | 2016-11-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 38.