| abstract |
Provided are a pattern forming method including (1) a step of forming a resist underlayer film on a substrate to be processed, (2) a step of forming a resist film on the resist underlayer film, using a resist composition containing (A) a resin having a repeating unit containing a Si atom, and (B) a compound which generates an acid upon irradiation with actinic rays or radiation, (3) a step of exposing the resist film, (4) a step of developing the exposed resist film using a developer including an organic solvent, thereby forming a negative tone resist pattern, and (5) a step of processing the resist underlayer film and the substrate to be processed, using the resist pattern as a mask, thereby forming a pattern, in which the content of the resin (A) is 20% by mass or more with respect to the total solid content of the resist composition. |