| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_24aca9ded2638ea793d05360dde7a4a0 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N30-076 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N30-8542
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N30-853
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L41-187
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L41-332
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N30-082
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-308
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L41-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N30-076 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L41-187
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L41-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L41-332 |
| filingDate |
2016-03-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c53b2ccf5bb8353f3855422f40585c56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7f8b1bd78d4e12aefe1ab72e37d37104
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f3d16a17807eb5c0469d0bc1339e03b1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8a6f79a1e505472f51b296fd9af935ba
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a92963460082408359a9975778a4bf73
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f5a2e9639f142e55edae0c515797cba9 |
| publicationDate |
2018-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2018108530-A1 |
| titleOfInvention |
Method for manufacturing niobate-system ferroelectric thin-film device |
| abstract |
This method for manufacturing a niobate-system ferroelectric thin-film device includes: a lower electrode film formation step of forming a lower electrode film on a substrate; a ferroelectric thin film formation step of forming a niobate-system ferroelectric thin film on the lower electrode film; an etch mask pattern formation step of forming an etch mask in a desired pattern on the niobate-system ferroelectric thin film, the etch mask being an amorphous fluororesin film laminated via a noble metal film; and a ferroelectric thin film etching step of shaping the niobate-system ferroelectric thin film into a desired fine pattern by wet etching using an etchant comprising: a chelating agent; an aqueous alkaline solution containing an aqueous ammonia solution; and an aqueous hydrogen peroxide solution. |
| priorityDate |
2015-03-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |