| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_41ac7ff6ab574ca3737b892da2ebfe6f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42368
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0696 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66068
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0623
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0615
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4236
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66734
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7813
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66704
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7825
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-423
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1095 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10 |
| filingDate |
2017-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b496c9c15f641e9ade57330c86a8f33d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b3c7797a0b7783d6955316841469bc8e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fee008336f2a499f0ad11f091a201a89 |
| publicationDate |
2018-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2018090612-A1 |
| titleOfInvention |
Switching Device and Method of Manufacturing the Same |
| abstract |
A switching device includes a semiconductor substrate; a trench; a conductor layer extending in a longitudinal direction of the trench so as to be in contact with a bottom surface of the trench; a bottom insulating layer covering an upper surface of the conductor layer; a gate insulating layer covering a side surface of the trench; and a gate electrode disposed in the trench. The semiconductor substrate includes a first semiconductor region of a first conductivity type, a body region of a second conductivity type, a second semiconductor region of the first conductivity type, a bottom semiconductor region of the second conductivity type extending in the longitudinal direction so as to be in contact with the conductor layer, and a connection semiconductor region of the second conductivity type connected to the body region and to the bottom semiconductor region. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10170470-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10367091-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018114789-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10374081-B2 |
| priorityDate |
2016-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |