| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823821
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823842
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0924
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-845
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4966
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1211 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092 |
| filingDate |
2016-09-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_727d1478d7f6c0e3e37ad1e69c37655d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e61c5258b3da69cb6a51711958544af6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c28f10a63ac4320070b366575649a665
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e73ecb1d0ef7da94253c60ca6a5a5621
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fe6ecfbd2375f6827c4daf8b7d645025
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a470b0ebf460474816d51d5b36f793d7 |
| publicationDate |
2018-03-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2018082908-A1 |
| titleOfInvention |
Semiconductor device and manufacturing method thereof |
| abstract |
A semiconductor device includes a first semiconductor channel, a second semiconductor channel, a first gate stack and a second gate stack. The first gate stack includes N-work function metal present on the first semiconductor channel. The second gate stack includes N-work function metal present on the second semiconductor channel. The N-work function metal in the first gate stack and the second gate stack are substantially different. The difference includes at least one of N-work function metal type and N-work function metal amount. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10249632-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019165116-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11282933-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10410854-B2 |
| priorityDate |
2016-09-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |