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filingDate 2017-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d28ea20be27853ac929f050bca3982a5
publicationDate 2018-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2018076319-A1
titleOfInvention Closed cell lateral mosfet using silicide source and method of forming
abstract A closed cell lateral MOSFET device includes minimally sized source/body contacts formed in source cells with silicided source and body diffusion regions formed therein. In this manner, the cell pitch of the cellular transistor array is kept small while the ruggedness of the transistor is ensured. In other embodiments, a closed cell lateral MOSFET device is formed using silicided source and body diffusion regions and self-aligned contacts or borderless contacts as the source/body contacts. The polysilicon gate mesh can be formed using minimum polysilicon-to-polysilicon spacing to minimize the cell pitch of the cellular transistor array.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11581215-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2023128785-A1
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018138168-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022352007-A1
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priorityDate 2014-04-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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