| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCAdditional |
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-456
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76855
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843 |
| classificationCPCInventive |
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66742
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28568
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823807
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823821
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823814
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-845
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-092
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0924 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-161
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate |
2016-09-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2ee0bbb2d8b53546304dcb82f754e429
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_46629f4e6bef29ccc8998cfc9bfce57e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_27bf14955599d31b80923b0c0b344e3c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eb9e5f1701e0d8f030fc230042b203df |
| publicationDate |
2018-03-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2018068857-A1 |
| titleOfInvention |
Low resistance source-drain contacts using high temperature silicides |
| abstract |
A semiconductor structure and a method for fabricating the same. The semiconductor structure includes at least one semiconductor fin disposed on a substrate. A disposable gate contacts the at least one semiconductor fin. A spacer is disposed on the at least one semiconductor fin and in contact with the disposable gate. Epitaxially grown source and drain regions are disposed at least partially within the at least one semiconductor fin. A first one of silicide and germanide is disposed on and in contact with the source region. A second one of one of silicide and germanide is disposed on and in contact with the drain region. The method includes epitaxially growing source/drain regions within a semiconductor fin. A contact metal layer contacts the source/drain regions. One of a silicide and a germanide is formed on the source/drain regions from the contact metal layer prior to removing the disposable gate. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10332809-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11296079-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10903318-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11127817-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11569361-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10504794-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2021391224-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10559685-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10636874-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11621199-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10832970-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2020020772-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-2603283-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-2603283-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10916649-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11158543-B2 |
| priorityDate |
2016-09-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |