| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28008
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42376
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28114
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0886
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4236
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32133
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42356
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate |
2017-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_992fd6078571abc8d14a9c19d00ea111
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a36aabd143da24a51e3708b7d2a5f805
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5606f0fb6cbc7a16f50ffcf7cccaba27
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6a349426564c172c083ed8599c1f054f |
| publicationDate |
2018-03-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2018061977-A1 |
| titleOfInvention |
Device and method of fabricating a semiconductor device having a t-shape in the metal gate line-end |
| abstract |
A method of fabricating a metal gate structure in a semiconductor device is disclosed. The method comprises removing a dummy poly gate, removing IL oxide and STI using a dry etch process and a wet lateral etch process to form a T-shape void in the semiconductor device, and depositing metal gate material in the T-shape void to form a T-shape structure in a metal gate line-end. A semiconductor device fabricated from a process that included the removal of a dummy poly gate is disclosed. The semiconductor device comprises an OD fin and a metal gate fabricated above a section of the OD fin and adjacent to a side section of the OD fin. The metal gate has a T-shape structure in a metal gate line-end. The T-shape structure was formed by removing IL oxide and STI using a dry and a wet lateral etch process to form a T-shape void. |
| priorityDate |
2014-04-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |