| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_80973ca8e1b3acbac7208592978d413c |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0805
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7687
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76846
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5223
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53233
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-91
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-75
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-642 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L49-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 |
| filingDate |
2017-08-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a18db49b6ed94c5bfab88655cc4a2b2b |
| publicationDate |
2018-03-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2018061697-A1 |
| titleOfInvention |
Semiconductor device having mim capacitor |
| abstract |
A semiconductor device that provides a pad electrically connected to the metal layer and a capacitor connected to the pad is disclosed. The semiconductor device provides an insulating film between the lower electrode of the capacitor and the pad. Because the insulating film protects and isolates the lower electrode from the etching of the substrate via and the deposition of the via metal, the lower electrode causes no voids or vacancies during the formation of the via and the via metal. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11444020-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11251071-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11348843-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11646220-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10998243-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10622302-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10629477-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10992100-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11158775-B2 |
| priorityDate |
2016-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |