| abstract |
According to one embodiment, a semiconductor light emitting device includes a substrate, a semiconductor light emitting structure including an active layer, a first light reflecting structure disposed between the substrate and the semiconductor light emitting structure, a second light reflecting structure disposed on an upper side of the semiconductor light emitting structure and a pair of electrodes applying a current to the semiconductor light emitting structure. At least one of the first and second light reflecting structures is a multilayer reflective film including a plurality of structure layers, each structure layer including a high refractive index region and a low refractive index region which are disposed such that a refractive index of the structure layer is periodically changed, and a low refractive index layer disposed between two adjacent structure layers. |