| abstract |
Methods of the disclosure include a BN ALD process at low temperatures using a reactive nitrogen precursor, such as thermal N 2 H 4 , and a boron containing precursor, which allows for the deposition of ultra thin (less than 5 nm) films with precise thickness and composition control. Methods are self-limiting and provide saturating atomic layer deposition (ALD) of a boron nitride (BN) layer on various semiconductors and metallic substrates. |