http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018025897-A1

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filingDate 2016-02-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f4f2f7e2793f1a89b6440f97dc4243af
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publicationDate 2018-01-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2018025897-A1
titleOfInvention Systems and approaches for semiconductor metrology and surface analysis using secondary ion mass spectrometry
abstract Systems and approaches for semiconductor metrology and surface analysis using Secondary Ion Mass Spectrometry (SIMS) are disclosed. In an example, a secondary ion mass spectrometry (SIMS) system includes a sample stage. A primary ion beam is directed to the sample stage. An extraction lens is directed at the sample stage. The extraction lens is configured to provide a low extraction field for secondary ions emitted from a sample on the sample stage. A magnetic sector spectrograph is coupled to the extraction lens along an optical path of the SIMS system. The magnetic sector spectrograph includes an electrostatic analyzer (ESA) coupled to a magnetic sector analyzer (MSA).
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018067062-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10215719-B2
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Total number of triples: 29.