| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02186
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32139
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0332
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0338 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-033
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate |
2017-09-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ce543c309eefb02e66f3cfc6fdffdc27
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e09f58150543c6c9de8772a6219a8b57
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ad17a53f9778fc14c1d304d5a07dd67b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ec53bbed3ab4233ceca511f5be2791d2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fbaddd9d9ce711d130f76df8f8c4bbf1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1df922e5f172b988a8f9d68549f0c9b2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_02781d606ae5569b0d00f4e6f1d6a843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c417761142c33aa3a319620b6a8e9373
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e2b16337882c37b12eca7f425dd9100c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5d458bbf2bd4c11fd0ff6f9ecca0ec90
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_22749af96ebc50a82eb4bc0112ff3754 |
| publicationDate |
2018-01-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2018012761-A1 |
| titleOfInvention |
Lithography Using High Selectivity Spacers for Pitch Reduction |
| abstract |
A method embodiment for patterning a semiconductor device includes patterning a dummy layer over a hard mask to form one or more dummy lines. A sidewall aligned spacer is conformably formed over the one or more dummy lines and the hard mask. A first reverse material layer is formed over the sidewall aligned spacer. A first photoresist is formed and patterned over the first reverse material layer. The first reverse material layer using the first photoresist as a mask, wherein the sidewall aligned spacer is not etched. The one or more dummy lines are removed, and the hard mask is patterned using the sidewall aligned spacer and the first reverse material layer as a mask. A material used for forming the sidewall aligned spacer has a higher selectivity than a material used for forming the first reverse material layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11524509-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2021167809-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20190120991-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102572514-B1 |
| priorityDate |
2013-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |