| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-4141 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-414
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-12 |
| filingDate |
2017-08-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5d4b0b3f9c8dc2704ea5965ee8881b92
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_53a207e2f181f090806efb617678ea6a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3342ad160569da49f672b9d61e7ff460 |
| publicationDate |
2017-12-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2017350839-A1 |
| titleOfInvention |
Gas sensor and sensor apparatus |
| abstract |
A gas sensor includes a p-type semiconductor layer that contains copper or silver cations and contacts with detection target gas, a first electrode that is a Schottky electrode to the p-type semiconductor layer, a high-resistance layer that is provided between the p-type semiconductor layer and the first electrode such that the p-type semiconductor layer and the first electrode partly contact with each other and has resistance higher than that of each of the p-type semiconductor layer and the first electrode, and a second electrode that is an ohmic electrode to the p-type semiconductor layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110940709-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11073492-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111403603-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2019106350-A1 |
| priorityDate |
2015-03-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |