| abstract |
A new GaN single crystal is provided. A GaN single crystal according to the present embodiment comprises a gallium polar surface which is a main surface on one side and a nitrogen polar surface which is a main surface on the opposite side,n wherein on the gallium polar surface is found at least one square area, an outer periphery of which is constituted by four sides each with a length of 2 mm or more, and, when the at least one square are is divided into a plurality of sub-areas each of which is a square of 100 μm×100 μm, pit-free areas account for 80% or more of the sub-areas. |