| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fcc0b66123940d1b32783569ebfa2d45 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0273
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-094
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0397
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0752
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-325
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0751 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-09
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-075
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-16 |
| filingDate |
2017-02-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_860728f36feb502b2bb2d95cc3e6b09d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4cb73d2f3d5841f9c78cfa6e04352ca6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_828e44f905150668e0a8e8ce1165781b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8ddc677a1d95c7800ce7dbc0b57c0bc1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a9163d5763457518986267c7f5364aae
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f9473e6941c583ff6ee73ad721e18287
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_73d686027071b024dc60e00ec08fd0d6 |
| publicationDate |
2017-11-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2017322492-A1 |
| titleOfInvention |
Resist pattern-forming method |
| abstract |
A resist pattern-forming method includes applying a resist underlayer film-forming composition to a substrate to form a resist underlayer film. The resist underlayer film-forming composition includes (A) a polysiloxane. A radiation-sensitive resin composition is applied to the resist underlayer film to form a resist film. The radiation-sensitive resin composition includes (al) a polymer that changes in polarity and decreases in solubility in an organic solvent due to an acid. The resist film is exposed. The exposed resist film is developed using a developer that includes an organic solvent. |
| priorityDate |
2010-09-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |